Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio
Keywords:
pentacene; simulation; organic thinfilm transistor; Poole-Frenkel mechanism; threshold voltage; gate-electrode; workfunction
Abstract
In this paper we have presented the simulation and analysis of the channel field, potential, mobility, hole concentration, and the threshold voltage of pentacene thin film transistor with gate metal work function and gate insulator thickness. The top contact transistor from pentacene active material, paryelene dielectric and gold source/drain electrodes, has been used for our simulation. The simulations have been performed using Silvaco#x2019;s Atlas device simulator. The Poole-Frenkel transport model was used in the pentacene active material. The results of the simulation have shown an impact of the gate metal work function on threshold voltage, channel potential, channel charge concentration, channel field, and mobility of the device.
Downloads
- Article PDF
- TEI XML Kaleidoscope (download in zip)* (Beta by AI)
- Lens* NISO JATS XML (Beta by AI)
- HTML Kaleidoscope* (Beta by AI)
- DBK XML Kaleidoscope (download in zip)* (Beta by AI)
- LaTeX pdf Kaleidoscope* (Beta by AI)
- EPUB Kaleidoscope* (Beta by AI)
- MD Kaleidoscope* (Beta by AI)
- FO Kaleidoscope* (Beta by AI)
- BIB Kaleidoscope* (Beta by AI)
- LaTeX Kaleidoscope* (Beta by AI)
How to Cite
Published
2016-05-15
Issue
Section
License
Copyright (c) 2016 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.