Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact

Authors

  • E.A. Kerimov

Keywords:

resonant-frequency method, optical constants, multibeam interferometry method, quartz element

Abstract

Measured resistivities of produced silicide showed their good conductive properties The calculation of technological route for obtaining thin silicide contacts 100A0 in multilayer metallization of Si substrate was carried out and the optimal technological regimes for obtaining Pd Pt and Ni silicide in single-layer metallization of Si substrate were determined

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How to Cite

E.A. Kerimov. (2023). Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact. Global Journals of Research in Engineering, 23(G2), 21–27. Retrieved from https://engineeringresearch.org/index.php/GJRE/article/view/101600

 
Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact

Published

2023-06-29

Issue

Vol. 23 No. G2 (2023): GJRE-G Industrial Engineering: Volume 23 Issue G2

Section

Articles

License

Copyright (c) 2023 Authors and Global Journals Private Limited

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.