A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations
Keywords:
Silicon Drift Detectors, Junction Field Effect Transistors, Technology Computer aided Design
Abstract
Proto-type commercial grade Silicon Drift Detectors (SDDs) with on-chip low noise JFETs have been realized using silicon bipolar technology at Bharat Electronics Ltd (BEL), Bangalore. Noise analysis articulating the relationships of various noise sources on the electrical parameters of the fabricated SDD and JFET have been discussed. TCAD device simulations have been performed for the SDD and on-chip JFET for static (dc) and dynamic cases. The static case simulations revealed values of critical dc performance parameters like leakage current, anode capacitance etc. Dynamic simulations meant to study the effect of radiation, revealed the relationship between drift time
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Published
2012-07-15
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Copyright (c) 2012 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.