W. Wondmagegn. Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio. GJRE [Internet]. 2016 May 15 [cited 2024 Apr. 28];16(F8):1-8. Available from: https://engineeringresearch.org/index.php/GJRE/article/view/1542