W. WONDMAGEGN. Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio. Global Journals of Research in Engineering, [S. l.], v. 16, n. F8, p. 1–8, 2016. Disponível em: https://engineeringresearch.org/index.php/GJRE/article/view/1542. Acesso em: 28 apr. 2024.