@incollection{, CCF3D4AEF43F654B1CCFE65B86B1CDF3 , author={{Christian KwakuAmuzuvi} and {Christian KwakuAmuzuvi} and {University of Nottingham (UNott), Nottingham, NG7 2RD, U.K.}}, journal={{Global Journal of Researches in Engineering}}, journal={{GJRE}}2249-45960975-586110.34257/gjre, address={Cambridge, United States}, publisher={Global Journals Organisation}131615 } @book{b0, , title={{Laser Focus World}} , author={{ RSteele }} , year={2008. sessionID=81697E67BEC59096E4AA81FC2&cid =798041&eid=10916} } @incollection{b1, , title={{High-power near-diffractionlimited tapered amplifiers at 1064 nm for optical intersatellite communications}} , author={{ PJChazan } and { MMayor } and { SMorgott } and { MMikulla } and { RKiefer } and { SMuller } and { MWalther } and { JBraunstein } and { GWeimann }} , journal={{IEEE Photonics Technology Letters}} 10 , year={1998} } @incollection{b2, , title={{Manufacturing with novel high-power diode lasers}} , author={{ WSchulz } and { RPoprawe }} , journal={{IEEE Journal of Selected Topics in Quantum Electronics}} 6 , year={2000} } @incollection{b3, , title={{Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars}} , author={{ RXia } and { ECLarkins } and { IHarrison } and { SR ADods } and { AVAndrianov } and { JMorgan } and { JPLandesman }} , journal={{IEEE Photon. Technol. Lett}} 14 893 , year={2002} } @incollection{b4, , title={{Simultaneous quantification of strain and defects in high-power diode laser devices}} , author={{ JWTomm } and { AGerhardt } and { TElsaesser } and { DLorenzen } and { PHennig }} , journal={{Appl. Phys. Lett}} 81 3269 , year={2002} } @incollection{b5, , title={{Byemitter degradation analysis of high-power laser bars}} , author={{ SBull } and { JWTomm } and { MOudart } and { JNagle } and { CScholz } and { KBoucke } and { IHarrison } and { ECLarkins }} , journal={{J. Appl. Phys}} 98 63101 , year={2005} } @incollection{b6, , title={{Design of wide-emitter single-mode laser diodes}} , author={{ JJLim } and { TMBenson } and { ECLarkins }} , journal={{IEEE J. Quantum Electron}} 41 506 , year={2005} } @incollection{b7, , title={{The impact of nonequilibriumgain in a spectral laser diode model}} , author={{ PJBream } and { JJLim } and { SBull } and { AVAndrianov } and { SSujecki } and { ECLarkins }} , journal={{Opt. Quantum Electron}} 38 1019 , year={2006} } @book{b8, , title={{Emulation and By-Emitter Degradation Analysis of High Power Lasers}} , author={{ CKAmuzuvi }} , year={2013} , publisher={Lap Lambert Academic Publishing} , address={Saarbrücken, Germany} } @incollection{b9, , title={{The impact of temperature and packaging-induced strain on current competition and emitter power in laser bars}} , author={{ CKAmuzuvi } and { SBull } and { JWTomm } and { JNagle } and { ECLarkins } and { BSumpf } and { GErbert } and { NMichel } and { MKrakowski }} , journal={{Applied Physics Letter}} , year={2011} }