An Adder with Novel PMOS and NMOS for Ultra Low Power Applications in Deep Submicron Technology

Authors

  • Ch. Ashok Babu

  • J.V.R. Ravindra

  • K. Lal Kishore

Keywords:

average power, leakage power, delay, DTMOS, PDP

Abstract

Power has become a burning issue in modern VLSI design as the technology advances especially below 45nm technology Leakage power become more problem apart of the dynamic power This paper presents a full adder with novel PMOS and NMOS which consume less power compare to conventional full adder and DTMOS full adder this paper shows different types of adders and their power consumption area and delay All the experiments have been carried out using cadence virtuoso design lay out editor which shows power consumption of different types of adders 1-2

How to Cite

Ch. Ashok Babu, J.V.R. Ravindra, & K. Lal Kishore. (2013). An Adder with Novel PMOS and NMOS for Ultra Low Power Applications in Deep Submicron Technology. Global Journals of Research in Engineering, 13(F14), 27–30. Retrieved from https://engineeringresearch.org/index.php/GJRE/article/view/911

An Adder with Novel PMOS and NMOS for Ultra Low Power Applications in Deep Submicron Technology

Published

2013-10-15