@incollection{,
	
					
					
					BC777A55A17B41819F8537D59DF90300
				,
	author={{Dr. Santosh K.Gupta} and {S.Baishya} and {National Institute of Technology Silchar}},
	journal={{Global Journal of Researches in Engineering}},
	journal={{GJRE}}2249-45960975-586110.34257/gjre,
	address={Cambridge, United States},
	publisher={Global Journals Organisation}1292124
}

@incollection{b0,
	
	
		,
	title={{Modeling and Simulation of Triple Metal Cylindrical Surround Gate MOSFETs for reduced Short Channel Effects}}
		,
	author={{
			SKGupta
		} and {
			SBaishya
		}}
		
	
	
		,
	journal={{International Journal of Soft Computing and Engineering (IJSCE)}}
		
			2
			2
			
			,
	year={May 2012}
		
	

}

@incollection{b1,
	
	
		,
	title={{Simulation and Modeling of Double Material Double Gate Surround Gate (DMDG-SG) MOSFETs}}
		,
	author={{
			SKGupta
		} and {
			KaushikGuha
		} and {
			SBaishya
		}}
		
		
	
	
		,
	booktitle={{ICGST Journal of Programmable Devices, Circuits, and Systems}}
				
			,
	year={2012}
			12
			
		
	

}

@incollection{b2,
	
	
		,
	title={{Multi-gate SOI MOSFETs}}
		,
	author={{
			PColinge
		}}
	
	
		,
	journal={{Microelectronic Engineering}}
		
			84
			9
			
			,
	year={2007}
		
	

}

@book{b3,
	
	
		,
	title={{Double-Gate Silicon-on-Insulator transistor with volume inversion: A new device with greatly enhanced performance}}
		,
	author={{
			FBalestra
		} and {
			SCristoloveanu
		} and {
			MMenachir
		} and {
			JBrini
		} and {
			TElewa
		}}
		
		
		
		
		
	

}

@incollection{b4,
	
	
		,
	title={{}}
	
	
		,
	journal={{IEEE Electron Device Letters}}
		
			8
			
			,
	year={September 1987}
		
	

}

@incollection{b5,
	
	
		,
	title={{On the Short-Channel Theory for MOS Transistor}}
		,
	author={{
			MassimoConti
		} and {
			ClaudioTurchetti
		}}
		
	
	
		,
	journal={{IEEE Transactions on Electron Devices}}
		
			38
			12
			
			,
	year={1991}
		
	

}

@book{b6,
	
	
		,
	title={{A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs}}
		
	

}