@incollection{,
	
					
					
					F8DBEA379C117A2954A61AD2A8A58381
				,
	author={{Md. AlamgirHossain} and {Mahfuzul HaqueChowdhury} and {Md. MijanurRahman} and {}},
	journal={{Global Journal of Researches in Engineering}},
	journal={{GJRE}}2249-45960975-586110.34257/gjre,
	address={Cambridge, United States},
	publisher={Global Journals Organisation}1221923
}

@incollection{b0,
	
	
		,
	title={{A charge-oriented model for MOS transistor capacitances}}
		,
	author={{
			DWard
		} and {
			RDutton
		}}
		
	
	
		,
	journal={{IEEE J. Solid State Circuits}}
		
			13
			703
			,
	year={1978}
		
	

}

@incollection{b1,
	
	
		,
	title={{Selfconsistent modeling of accumulation layers and tunneling currents through very thin oxides}}
		,
	author={{
			FRana
		} and {
			STiwari
		} and {
			DABuchanan
		}}
		
		
	
	
		,
	journal={{Appl. Phys. Lett}}
		
			69
			
			,
	year={1996}
		
	

}

@incollection{b2,
	
	
		,
	title={{Modeling gate leakage current in nMOS structures due to tunneling through an ultrathin oxide}}
		,
	author={{
			W.-KShih
		}}
	
	
		,
	journal={{Solid-State Electron}}
		
			42
			
			,
	year={1998}
		
	

}

@incollection{b3,
	
	
		,
	title={{Quantum mechanical modeling of electron tunneling from the inversion layer of ultra-thinoxide nMOSFET's}}
		,
	author={{
			S.-HLo
		} and {
			DABuchanan
		} and {
			YTaur
		} and {
			WWang
		}}
		
		
		
	
	
		,
	journal={{IEEE Electron Device Lett}}
		
			18
			
			,
	year={May 1997}
		
	

}

@incollection{b4,
	
	
		,
	title={{Modeling of direct tunneling current through gate dielectric stacks}}
		,
	author={{
			SMudanai
		}}
	
	
		,
	booktitle={{Proc. SISPAD}}
				SISPAD
		
			,
	year={Sept. 2000}
			
		
	

}

@incollection{b5,
	
	
		,
	title={{The quantum transmitting boundary method}}
		,
	author={{
			CSLent
		} and {
			DJKirkner
		}}
		
	
	
		,
	journal={{J. Appl. Phys}}
		
			67
			
			,
	year={May 1990}
		
	

}

@incollection{b6,
	
	
		,
	title={{Quantitative understanding of inversion-layer capacitance in Si MOSFETs}}
		,
	author={{
			STakagi
		} and {
			AToriumi
		}}
		
	
	
		,
	journal={{IEEE Trans. Electron Devices}}
		
			42
			12
			
			,
	year={Dec. 1995}
		
	

}

@book{b7,
	
	
		,
	title={{}}
		,
	author={{
			FSchwierz
		} and {
			HWong
		} and {
			JJLiou
		} and {
			CmosNanometer
		}}
		
		
		
		
			,
	year={2010}
			,
	publisher={Pan Stanford Publishing}
			,
	address={Singapore}
		
	

}

@incollection{b8,
	
	
		,
	title={{Quantum capacitance devices}}
		,
	author={{
			SLuryi
		}}
	
	
		,
	booktitle={{References Références Referencias F}}
				
			,
	year={Feb. 1988}
			52
			
		
	

}