@incollection{, 0EB04C5FBCE72509E25BDCD39B0D477D , author={{Gavin CRider}}, journal={{Global Journal of Researches in Engineering}}, journal={{GJRE}}2249-45960975-586110.34257/gjre, address={Cambridge, United States}, publisher={Global Journals Organisation}203519 } @incollection{b0, , title={{ESD Association Standard for the Development of an Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices)}} , booktitle={{ESD Association}} , year={2014} } @book{b1, , author={{ DBellmore }} , title={{Controlling ESD in Automated Handling Equipment. Electrical Overstress/ Electrostatic Discharge Symposium}} , year={2002} } @incollection{b2, , title={{Design of Semiconductor Manufacturing Equipment for Electrostatic Compatibility}} , author={{ JBruner }} , journal={{Sematech ESD Symposium}} , year={2002} } @incollection{b3, , title={{A Study of the Mechanisms for ESD Damage to Reticles}} , author={{ JMontoya } and { LLevit } and { AEnglisch }} , journal={{IEEE T Electron Pack}} 24 , year={2001} } @incollection{b4, , title={{Reticle boxes, ESD Control and Electrostatic Shielding}} , author={{ LLevit } and { GWeil }} , journal={{Sematech ESD Impact and Control Workshop}} , year={2001} } @book{b5, , title={{Measuring the Shielding Performance of Materials}} , author={{ JChubb }} , year={2000} , publisher={IEEE Industry Applications Conference} } @incollection{b6, , title={{EFM: A Pernicious New Electric Field Induced Damage Mechanism in Reticles}} , author={{ GRider }} , booktitle={{Sematech ESD Symposium}} , year={2003} } @incollection{b7, , title={{Quantification of the risk of field induced damage to reticles}} , author={{ GRider }} , journal={{Sematech ESD Symposium}} , year={2003} } @incollection{b8, , title={{}} , author={{ ACRudack } and { MPendley } and { PGagnon }} , journal={{Induced ESD Damage on Photomasks: A Reticle Evaluation. 23rd Annual BACUS Symposium on Photomask Technology}} 5256 , year={2003} } @incollection{b9, , title={{Reticle Carrier Material as ESD Protection}} , author={{ DHelmholz } and { MLering }} , journal={{Photomask Technology}} 6349 634952 , year={2006} } @book{b10, , title={{Experimental quantification of reticle electrostatic damage below the threshold for ESD. Metrology, Inspection, and Process Control for Microlithography XXII}} , author={{ GRider } and { TKalkur }} , year={2008} 6922 69221Y } @incollection{b11, , title={{Electric field-induced progressive CD degradation in reticles}} , author={{ GRider }} , journal={{Photomask Technology}} 7122 71220G , year={2008} } @book{b12, , author={{ GBen-Zvi } and { VDmitriev } and { EGraitzer }} , title={{Very High Sensitivity Mask Transmittance Mapping and Measurements Based on Non Imaging Optics with Galileo. Photomask and Next-Generation Lithography Mask Technology XV}} , year={2008} 7028 702828 } @book{b13, , title={{}} , author={{ GBen-Zvi }} , note={private communication of data produced by Brian Grenon Consultants} } @book{b14, , title={{High sensitivity electric field monitoring system for control of field-induced CD degradation in reticles (EFM). Photomask and Next-Generation Lithography Mask Technology XVI}} , author={{ TSebald } and { GRider }} , year={2009} 7379 73791P } @book{b15, , title={{How to protect reticles from electrostatic damage. SPIE Digital Library}} , author={{ GRider }} , year={2008. November 2018} } @incollection{b16, , title={{A Study of the Mechanisms for ESD Damage to Reticles}} , author={{ JMontoya } and { LLevit } and { AEnglisch }} , journal={{Sematech ESD Symposium}} , year={2000} } @incollection{b17, , title={{Automation of Electrical Overstress Characterization for Semiconductor Devices}} , author={{ CHDiaz }} , journal={{Hewlett Packard Journal}} 45 106 , year={1994} } @book{b18, , title={{Gate Oxide Breakdown. ECE1768 -Reliability of Integrated Circuits}} , author={{ NAzizi } and { PYiannacouras }} , year={2003} } @incollection{b19, , title={{Physical characterization of breakdown in metal-oxide-semiconductor transistors}} , author={{ KLPey } and { CHTung }} , journal={{SPIE Newsroom}} 2 4 , year={2007} } @incollection{b20, , title={{Electrical characteristics and reliability properties of metaloxide-semiconductor field-effect transistors with ZrO2 gate dielectric}} , author={{ DCHsu } and { MTWang } and { JLee }} , journal={{J Appl Phys}} 101 94105 , year={2007} } @book{b21, , title={{Diffusion in Semiconductors}} , author={{ DShaw }} , year={2017} , publisher={Springer Handbook of Electronic and Photonic Materials} } @incollection{b22, , title={{Can Electrostatic Discharge Sensitive electronic devices be damaged by electrostatic fields?}} , author={{ JSmallwood }} , journal={{J. Phys.: Conf. Ser}} 1322 12015 , year={2019} } @incollection{b23, , title={{An Agile Accelerated Aging, Characterization and Scenario Simulation System for Gate Controlled Power Transistors}} , author={{ GSonnenfeld } and { KGoebel } and { JCelaya }} , journal={{IEEE Autotestcon}} , year={2008} } @book{b24, , title={{Guide for the Handling of Reticles and Other Extremely Electrostatic Sensitive (EES) Items within Specially Designated Areas. SEMI Standard E163-0212}} }