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\title{TCAD Based Simulation and Performance Optimization of InxGa(1-X)N based Solar Cell}
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\begin{document}

             \author[1]{Deepak Kumar  Mangal}

             \author[2]{A. D. D.  Dwivedi}

             \author[3]{Md. Asif  Iqbal}

             \author[4]{Surender Kumar  Sharma}

             \affil[1]{  Poornima University Jaipur}

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\date{\small \em Received: 15 December 2018 Accepted: 4 January 2019 Published: 15 January 2019}

\maketitle


\begin{abstract}
        


Solar cells are a promising renewable and carbon-free electric energy resource to address the fossil-fuel shortage and global warming. Various studies on solar cells using IIInitrides semiconductors in the photovoltaic applications have been done. Among them the InGaN alloy is a promising candidate for the photovoltaic applications because it exhibits attractive photovoltaic properties such as high tolerance to radiation, high mobility, and large absorption coefficient allowing thinner layers of material to absorb most of the solar spectrum.Indium Gallium Nitride (InGaN) solar cells might yield high bene fits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition(from 0.7 eV to 3.42 eV) and It's energy range covering approximately the total solar spectrum [1].

\end{abstract}


\keywords{indium gallium nitrite (InGaN), energy band gap (EG), efficiency, fill factor (FF), opencircuit voltage, short-circuit current density, iii-nitride.}

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\let\tabcellsep& 	 	 		 
\section[{I. INTRODUCTION}]{I. INTRODUCTION}\par
roup III-V nitride are now a widely studied class of semiconductor materials. In x Ga (1-x) N, with small x, are very ef ficient light emitters, even in samples with relatively high densities of structural defects are used as component layers in a wide range of optoelectronic devices. Its high light absorption and its Indium-composition-tuned band gap, the Indium Gallium Nitride (InGaN) ternary alloy is a good candidate for high-efficiency-high-reliability solar cells able to operate in harsh environments.\par
Moreover, the most important advantage of InGaN alloy might be the direct band gap energy which can be adjusted according to the indium composition.\par
Thus, the InGaN's energy band gap can be tuned from 0.7 eV to 3.42 eV, covering approximately the total solar spectrum  {\ref [1]}. In this paper, we present simulation of InGaN based p-n homo junction solar cell at different Indium composition . The layers of InGaN solar cell can be deposited using the cost-effective techniques, such as Metal Organic Chemical Vapor Deposition (MOCVD), Metal Organic Vapor Phase Epitaxy (MOVPE), and Molecular Beam Epitaxy (MBE)  {\ref [2]}. Whatever the deposition technique used, higher growth rates (\textasciitilde 1.0 Angstrom/second) and lower temperature(\textasciitilde 550 °C) characterize the InGaN growth   
\section[{(}]{(}\par
)InN GaN g x g g 1-x In Ga N =x.E +(1-x).E -b.x.(1-x) E (1)\par
where the band gap energy of InN denoted as ?? ð??"ð??" ?????? and band gap energy of GaN denoted as ?? ð??"ð??" ?????? is 0.7eV and 3.42eV, respectively, x is the indium content and ?? is the bowing parameter (?? = 1.43)  {\ref [5]} {\ref [6]}.\par
The other modeling parameters of the In??Ga (1-??)N alloy were calculated using the following equations-Electron Affinity \hyperref[b5]{[7]}\hyperref[b6]{[8]}\hyperref[b0]{[9]}: -( ) ( ) 1 4.1 0.7(3.4 ) x g x In Ga N E ? ? = + ? (2)\par
Relative permittivity[6]: -( ) ( )\textbf{1}\par
15.3 8.9(1 )   {\ref (} ) 18 1 (0.9 2.3(1 )).10x x In Ga N x x ? ? = + ? (3)C x x N In Ga N x x ? = + ? (4)\par
Effective density of valence band \hyperref[b6]{[8]}\hyperref[b0]{[9]}: -( ) ( )\textbf{19 1}\par
(5.3 1.8(1 )).10 V x x N In Ga N x x ? = + ? (5) 
\section[{b) Physical \& Optical Perameters}]{b) Physical \& Optical Perameters}\par
The energy band gap of In x Ga (1-x) N is depended on concentration of Indium (x) and energy band gap of In x Ga (1-x) N is given by following formula     {\ref (} )(GaN) 1 (524* x) n x n x U In Ga N U ? = +\textbf{(11) ( ) ( )}h(GaN) 1 (6.5* x) h x x U In Ga N U ? = +\textbf{(12)}\par
Where the U n(GaN) is 1000 \& U h(GaN) is 170.\par
For the In??Ga 1-?? N alloys, Adachi's wavelengthdependent refractive index model is given by the following equation  {\ref [6,}\hyperref[b3]{12]}:2 E E E (E) 2 1 1 B E E E ph ph ph g g g n A ? = ? + ? ? + ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? .......(\textbf{13})\par
Where Eph is photon Energy A \& B is coefficient dependent on material composition that equation giving by following equation. This real part of refractive index is approximate same 2.32 Its slightly worry for InGaN alloy with different composition of x from 2.30 to 2.34.\par
The InGaN alloys absorption coefficient ?? is given by equation (  {\ref 16}) \hyperref[b4]{[13]} ( ) 
\section[{(}]{(}\par
)  Mobility \hyperref[b2]{[11]}: -5 2 1 10 (E E ) D(E E ) x ph g ph g x In Ga N C ? ? = ? + ? ???????????????????(B B i i B U U T U N T U ? ? ? ? = + ? ? ? ? + ????????????????????(10)( ) . . \% SC OC in I V FF P ? =\textbf{(9)}\par
Where I SC is short circuit current, V OC is open circuit voltage, P in is incident optical power and FF is fill factor of the solar cell. \hyperref[b1]{[10]} ( ) ( ) 1 0.17 1.0(1 ) Intrinsic carrier concentration: -h x x m In Ga N x x ? = + ? (7)2 g B E K T i C V N N e n ? =\textbf{(8)}\par
Where K B is Boltzmann constant and T is lattice temperature Efficiency: -Velocity of electron \& hole (S n,h ) [cm/s] 10 3 
\section[{Recombination time of electron \& hole (? n,h )[sec.] 1ns}]{Recombination time of electron \& hole (? n,h )[sec.] 1ns}\par
For the case studied, the initial physical and geometrical parameter values used for In x Ga (1-x) N single p-n junction solar cell are presented in table 6. After modeling \& simulation get results with the help of above work following results are tabulates    {\ref (} )5 1 1.24 2.2*10 E x g x In Ga N ? ? ? = ? ????.(\textbf{19})\par
Where ? is photon wavelength\par
For the In??Ga 1-?? N alloys, wavelength-dependent imaginary part of refractive index is given by the following equation4 K ?? = ? ??????????????(20)\par
Where pie (?) is 3.14. Following Fig.  {\ref 2}   Spectral response with respect to wavelength has been shown above in Fig. 5. Source photo current is maximum possible total current due to incident photons, available photo current is current due to total generated electron-hole pair and cathode current is total current collected at terminals. Among these three, source current is always greater than other two. Total photons incident losses due to reflection, transmission, thermalization etc. Further there is loss of some of the generated electron-hole pairs due to recombination and hence collected cathode current is less than or equal available photo current. After getting all results we gets maximum efficiency is 19.36\% at In 0.50 Ga 0.50 N single p-n junction solar cell.   This above table \hyperref[tab_10]{9} shows simulation results of fill factor and efficiency at different composition of x for single p-n junction solar cell.  In this paper we report the TCAD simulation and performance optimization of In x Ga (1-x) N based solar cell. Evaluation of the performance of the device has been performed for various values of mole fraction x of In in InGaN. Extracted performance parameters such as current, voltage, power, fill factor and efficiency from the proposed structure are: open circuit voltage (V oc ) of 1.08 V, Short circuit current (I sc ) is 0.027A, Fill Factor (FF) is 88.58\%, Maximum voltage (V max ) is 0.99 V, Maximum current (I max ) is 0.26A and overall efficiency is 19.36\%. IV. 
\section[{Conclusion}]{Conclusion}\begin{figure}[htbp]
\noindent\textbf{}\includegraphics[]{image-2.png}
\caption{\label{fig_0}}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{1}\includegraphics[]{image-3.png}
\caption{\label{fig_1}Fig. 1 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{}\includegraphics[]{image-4.png}
\caption{\label{fig_2}}\end{figure}
     \begin{figure}[htbp]
\noindent\textbf{2} \par 
\begin{longtable}{P{0.5442982456140351\textwidth}P{0.15409356725146198\textwidth}P{0.15160818713450291\textwidth}}
\multicolumn{3}{l}{of electron affinity and relative permittivity}\\
\multicolumn{3}{l}{of In x Ga (1-x) N at different value of x}\\
Material\tabcellsep Electron\tabcellsep Relative\\
In x Ga (1-x) N\tabcellsep Affinity(X)\tabcellsep permittivity(E)\\
GaN\tabcellsep 4.092\tabcellsep 8.9\\
In 0.20 Ga 0.80 N\tabcellsep 4.3955\tabcellsep 10.18\\
In 0.35 Ga 0.65 N\tabcellsep 4.5931\tabcellsep 11.14\\
In 0.50 Ga 0.50 N\tabcellsep 4.765\tabcellsep 12.1\\
In 0.62 Ga 0.38 N\tabcellsep 4.884\tabcellsep 12.868\\
In 0.78 Ga 0.22 N\tabcellsep 5.017\tabcellsep 13.892\\
In 0.90 Ga 0.10 N\tabcellsep 5.0975\tabcellsep 14.66\\
InN\tabcellsep 5.152\tabcellsep 15.3\end{longtable} \par
  {\small\itshape [Note: ( )    ]} 
\caption{\label{tab_0}Table 2 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{3} \par 
\begin{longtable}{P{0.21864161849710984\textwidth}P{0.47413294797687855\textwidth}P{0.15722543352601154\textwidth}}
\tabcellsep \multicolumn{2}{l}{Energy Band Gap of In x Ga (1-x) N at x}\\
\tabcellsep Material In x Ga (1-x) N\tabcellsep Energy band gap (Eg)\\
\tabcellsep GaN\tabcellsep 3.42\\
\tabcellsep In 0.20 Ga 0.80 N\tabcellsep 2.6612\\
\tabcellsep In 0.35 Ga 0.65 N\tabcellsep 2.1672\\
\tabcellsep In 0.50 Ga 0.50 N\tabcellsep 1.7375\\
\tabcellsep In 0.62 Ga 0.38 N\tabcellsep 1.4401\\
\tabcellsep In 0.78 Ga 0.22 N\tabcellsep 1.1076\\
\tabcellsep In 0.90 Ga 0.10 N\tabcellsep 0.9063\\
Year 2019\tabcellsep InN\tabcellsep 0.77\\
18\tabcellsep \tabcellsep \\
of Researches in Engineering ( ) Volume XIX Issue IV Version I F\tabcellsep \tabcellsep \\
Global Journal\tabcellsep \tabcellsep \\
\tabcellsep © 2019 Global Journals\tabcellsep \end{longtable} \par
 
\caption{\label{tab_1}Table 3 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{1} \par 
\begin{longtable}{P{0.4415584415584415\textwidth}P{0.19870129870129868\textwidth}P{0.20974025974025973\textwidth}}
\tabcellsep Effective density\tabcellsep Effective density\\
Material\tabcellsep of Conduction\tabcellsep of Valance\\
In x Ga (1-x) N\tabcellsep band (Nc)\tabcellsep Band(Nv)\\
\tabcellsep (1×10 18 )\tabcellsep (1×10 20 )\\
GaN\tabcellsep 0\tabcellsep 0\\
In 0.20 Ga 0.80 N\tabcellsep 1.8\tabcellsep 1.06\\
In 0.35 Ga 0.65 N\tabcellsep 3.15\tabcellsep 1.855\\
In 0.50 Ga 0.50 N\tabcellsep 4.5\tabcellsep 2.65\\
In 0.62 Ga 0.38 N\tabcellsep 5.58\tabcellsep 3.286\\
In 0.78 Ga 0.22 N\tabcellsep 7.02\tabcellsep 4.134\\
In 0.90 Ga 0.10 N\tabcellsep 8.1\tabcellsep 4.77\\
InN\tabcellsep 9\tabcellsep 5.3\\
\multicolumn{2}{l}{Effective mass of electron[7]}\tabcellsep \end{longtable} \par
 
\caption{\label{tab_2}Table 1 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{5} \par 
\begin{longtable}{P{0.4035971223021583\textwidth}P{0.2262589928057554\textwidth}P{0.22014388489208633\textwidth}}
Material In x Ga (1-x) N\tabcellsep Mobility of Electron (MUN or Un)\tabcellsep Mobility of Hole (MUP or Uh)\\
GaN\tabcellsep 1000\tabcellsep 170\\
In 0.20 Ga 0.80 N\tabcellsep 1104.8\tabcellsep 171.3\\
In 0.35 Ga 0.65 N\tabcellsep 1183.4\tabcellsep 172.275\\
In 0.50 Ga 0.50 N\tabcellsep 1262\tabcellsep 173.25\\
In 0.62 Ga 0.38 N\tabcellsep 1324.9\tabcellsep 174.03\\
In 0.78 Ga 0.22 N\tabcellsep 1408.7\tabcellsep 175.07\\
In 0.90 Ga 0.10 N\tabcellsep 1471.6\tabcellsep 175.85\\
InN\tabcellsep 1524\tabcellsep 176.5\end{longtable} \par
 
\caption{\label{tab_4}Table 5 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{4} \par 
\begin{longtable}{P{0.4233840304182509\textwidth}P{0.2197718631178707\textwidth}P{0.20684410646387832\textwidth}}
Material\tabcellsep Effective Mass of\tabcellsep Effective Mass\\
In x Ga (1-x) N\tabcellsep Electron (Mn)\tabcellsep of Hole (Mh)\\
GaN\tabcellsep 0.2\tabcellsep 1\\
In 0.20 Ga 0.80 N\tabcellsep 0.184\tabcellsep 0.834\\
In 0.35 Ga 0.65 N\tabcellsep 0.172\tabcellsep 0.7095\\
In 0.50 Ga 0.50 N\tabcellsep 0.16\tabcellsep 0.585\\
In 0.62 Ga 0.38 N\tabcellsep 0.1504\tabcellsep 0.4854\\
In 0.78 Ga 0.22 N\tabcellsep 0.1376\tabcellsep 0.3526\\
In 0.90 Ga 0.10 N\tabcellsep 0.128\tabcellsep 0.253\\
InN\tabcellsep 0.12\tabcellsep 0.17\end{longtable} \par
 
\caption{\label{tab_5}Table 4 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{7} \par 
\begin{longtable}{P{0.4103448275862069\textwidth}P{0.2735632183908046\textwidth}P{0.1660919540229885\textwidth}}
Material In x Ga (1-x) N\tabcellsep Isc (mA/cm\textasciicircum 2)\tabcellsep Voc (V)\\
In 0.20 Ga 0.80 N\tabcellsep 0.00813315\tabcellsep 1.9963\\
In 0.35 Ga 0.65 N\tabcellsep 0.0158621\tabcellsep 1.51555\\
In 0.50 Ga 0.50 N\tabcellsep 0.0274789\tabcellsep 1.08184\\
In 0.62 Ga 0.38 N\tabcellsep 0.0385468\tabcellsep 0.781803\\
In 0.78 Ga 0.22 N\tabcellsep 0.0539032\tabcellsep 0.446001\\
In 0.90 Ga 0.10 N\tabcellsep 0.0654447\tabcellsep 0.242227\end{longtable} \par
 
\caption{\label{tab_6}Table 7 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{6} \par 
\begin{longtable}{P{0.33166969147005443\textwidth}P{0.14963702359346642\textwidth}P{0.05245009074410163\textwidth}P{0.043194192377495465\textwidth}P{0.0925589836660617\textwidth}P{0.053992740471869326\textwidth}P{0.001542649727767695\textwidth}P{0.001542649727767695\textwidth}P{0.01234119782214156\textwidth}P{0.02468239564428312\textwidth}P{0.00925589836660617\textwidth}P{0.0632486388384755\textwidth}P{0.004627949183303085\textwidth}P{0.004627949183303085\textwidth}P{0.004627949183303085\textwidth}}
\multicolumn{2}{l}{( ) 1 x D In Ga N ( x ?}\tabcellsep )\tabcellsep \multicolumn{3}{l}{0.665 3.616 2.460 x = ? + ?}\tabcellsep x\tabcellsep 2\tabcellsep ?(18)\tabcellsep \\
\multicolumn{9}{l}{Following equation is simplified expression of}\tabcellsep \\
\multicolumn{4}{l}{absorption coefficient ?? (19)}\tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \\
Imaginary Part of Refractive\tabcellsep Index(K)\tabcellsep \multicolumn{2}{l}{0 2000 4000 6000 8000 10000 12000}\tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep x=0.1\tabcellsep x=0.9 x=0.62 x=0.35 x=0.2 x=0.5 x=0.78\\
\tabcellsep \tabcellsep \tabcellsep 0\tabcellsep 0.2\tabcellsep 0.4\tabcellsep \tabcellsep \tabcellsep 0.6\tabcellsep 0.8\tabcellsep 1\tabcellsep 1.2\tabcellsep 1.4\tabcellsep 1.6\tabcellsep 1.8\\
\tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \multicolumn{2}{l}{Wavelength(?)}\\
\tabcellsep \multicolumn{10}{l}{Fig. 2: Graph of wavelength vs imaginary part of refrective index at different value of x}\\
\tabcellsep \tabcellsep \tabcellsep \tabcellsep \multicolumn{7}{l}{Some initial parameter are given in the following table-6}\\
\multicolumn{4}{l}{Parameter Used}\tabcellsep \tabcellsep Value\tabcellsep \tabcellsep \tabcellsep \tabcellsep \\
\multicolumn{4}{l}{Thickness of n-InGaN layer}\tabcellsep \tabcellsep 0.015 micron\tabcellsep \tabcellsep \tabcellsep \tabcellsep \\
\multicolumn{4}{l}{Thickness of p-InGaN layer}\tabcellsep \tabcellsep 0.63 micron\tabcellsep \tabcellsep \tabcellsep \tabcellsep \\
\multicolumn{4}{l}{n-type doping [cm -3 ]}\tabcellsep \tabcellsep 2e18\tabcellsep \tabcellsep \tabcellsep \tabcellsep \end{longtable} \par
  {\small\itshape [Note: ( )    ]} 
\caption{\label{tab_7}Table 6 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{} \par 
\begin{longtable}{P{0.5638613861386139\textwidth}P{0.004207920792079208\textwidth}P{0.1051980198019802\textwidth}P{0.004207920792079208\textwidth}P{0.004207920792079208\textwidth}P{0.004207920792079208\textwidth}P{0.02103960396039604\textwidth}P{0.004207920792079208\textwidth}P{0.004207920792079208\textwidth}P{0.004207920792079208\textwidth}P{0.02103960396039604\textwidth}P{0.004207920792079208\textwidth}P{0.004207920792079208\textwidth}P{0.10099009900990098\textwidth}}
\multicolumn{14}{l}{TCAD Based Simulation and Performance Optimization of In x ga (1-X) N Based Solar Cell}\\
( ) 1 x C In Ga N ( x ?\tabcellsep )\tabcellsep 3.525 18.29 40.22 x = ? +\tabcellsep x\tabcellsep 2\tabcellsep ?\tabcellsep 37.52\tabcellsep x\tabcellsep 3\tabcellsep +\tabcellsep 12.77\tabcellsep x\tabcellsep 4\tabcellsep ????????????????????(17)\\
\multicolumn{3}{l}{III. RESULT \& DISCUSSION}\tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \tabcellsep \end{longtable} \par
 
\caption{\label{tab_8}}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{8} \par 
\begin{longtable}{P{0.4443983402489627\textwidth}P{0.2856846473029046\textwidth}P{0.11991701244813277\textwidth}}
Material In x Ga (1-x) N\tabcellsep Im (mA/cm\textasciicircum 2)\tabcellsep Vm (V)\\
In 0.20 Ga 0.80 N\tabcellsep 0.00798644\tabcellsep 1.88\\
In 0.35 Ga 0.65 N\tabcellsep 0.01556\tabcellsep 1.41\\
In 0.50 Ga 0.50 N\tabcellsep 0.0265989\tabcellsep 0.99\\
In 0.62 Ga 0.38 N\tabcellsep 0.0372977\tabcellsep 0.69\\
In 0.78 Ga 0.22 N\tabcellsep 0.0507992\tabcellsep 0.369998\\
In 0.90 Ga 0.10 N\tabcellsep 0.0563837\tabcellsep 0.19\end{longtable} \par
 
\caption{\label{tab_9}Table 8 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{9} \par 
\begin{longtable}{P{0.46363636363636357\textwidth}P{0.195021645021645\textwidth}P{0.19134199134199134\textwidth}}
Material In x Ga (1-x) N\tabcellsep Fill Factor\tabcellsep Efficiency\\
In 0.20 Ga 0.80 N\tabcellsep 92.4754\tabcellsep 11.0401\\
In 0.35 Ga 0.65 N\tabcellsep 91.2636\tabcellsep 16.1321\\
In 0.50 Ga 0.50 N\tabcellsep 88.5801\tabcellsep 19.3624\\
In 0.62 Ga 0.38 N\tabcellsep 85.3975\tabcellsep 18.9231\\
In 0.78 Ga 0.22 N\tabcellsep 78.1818\tabcellsep 13.8203\\
In 0.90 Ga 0.10 N\tabcellsep 67.5787\tabcellsep 7.87713\end{longtable} \par
 
\caption{\label{tab_10}Table 9 :}\end{figure}
 \begin{figure}[htbp]
\noindent\textbf{} \par 
\begin{longtable}{P{0.07311827956989247\textwidth}P{0.009901433691756273\textwidth}P{0.7426075268817204\textwidth}P{0.010663082437275985\textwidth}P{0.013709677419354837\textwidth}}
Year 2019\tabcellsep \tabcellsep \\
22\tabcellsep \tabcellsep \\
of Researches in Engineering ( ) Volume XIX Issue IV Version I F\tabcellsep Efficiency\tabcellsep \multicolumn{2}{l}{Corporation, International Journal of Photoenergy, Volume 2015, Article ID 594858, 9 pages 2. N. Akter, "Design and simulation of Indium Gallium Nitridemultijunction tandem solar cells," International Journal of Research in Engineering and Technology, vol. 3, no.1,pp. 315 321, 2014. 3. D. V. P. McLaughlin and J. M. Pearce, "Progress in indium gallium nitride materials for solar photovoltaic energy conversion," Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science,vol.44,no.4,pp.1947-1954,2013. References références referencias 1. Mesrane, F. Rahmoune, A. Mahrane and and A. Oulebsir " Design and Simulation of InGaNp-n Junction Solar Cell" Hindawi Publishing}\\
Global Journal\tabcellsep \tabcellsep \multicolumn{2}{l}{5. F. Bouzid and S. Ben Machiche, "Potentials of InxGa1-xN photovoltaic tandems," Revue des}\\
\tabcellsep \tabcellsep Energies\tabcellsep Renouvelables,\tabcellsep vol.14,no.1,pp.47-\\
\tabcellsep \tabcellsep 56,2011.\\
\tabcellsep (b)\tabcellsep \multicolumn{2}{l}{6. Z. Li,H.Xiao, X. Wang et al., "T heoreticalsimulations}\\
Fig. 7:\tabcellsep \tabcellsep \multicolumn{2}{l}{of InGaN/Si mechanically stacked two-junction solar cell," Physica B: Condensed Matter, vol. 414, pp.}\\
\tabcellsep \tabcellsep \multicolumn{2}{l}{110-114, 2013.}\end{longtable} \par
 
\caption{\label{tab_11}}\end{figure}
 			\footnote{F© 2019 Global Journals} 		 		\backmatter   			 
\subsection[{Acknowledgement}]{Acknowledgement}\par
The authors are thankful to SERB, DST Government of India for the financial support under the grant sanctioned for Project No.ECR/2017/000179. 			  			  				\begin{bibitemlist}{1}
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\end{document}
