Abstract

Solar cells are a promising renewable and carbon-free electric energy resource to address the fossil-fuel shortage and global warming. Various studies on solar cells using IIInitrides semiconductors in the photovoltaic applications have been done. Among them the InGaN alloy is a promising candidate for the photovoltaic applications because it exhibits attractive photovoltaic properties such as high tolerance to radiation, high mobility, and large absorption coefficient allowing thinner layers of material to absorb most of the solar spectrum. Indium Gallium Nitride (InGaN) solar cells might yield high bene fits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition(from 0.7 eV to 3.42 eV) and It's energy range covering approximately the total solar spectrum[1].