@incollection{, 6167CE453FF61C381044D0D3D45A62AC , author={{M.Masmoudi} and {LATIS-ENISo, 4023 Sousse University, Tunisia}}, journal={{Global Journal of Researches in Engineering}}, journal={{GJRE}}2249-45960975-586110.34257/gjre, address={Cambridge, United States}, publisher={Global Journals Organisation}1764148 } @book{b0, , title={{A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications}} , author={{ OLatry } and { PDherbécourt }} , year={2010} } @incollection{b1, , title={{Reliability issues of flash memory cells}} , author={{ SAritome } and { RShirota } and { GHemink }} , booktitle={{Proc IEEE 1993}} IEEE 1993 } @incollection{b2, , title={{Local oxide capacitance as crucial parameter for characterization of hot-carrier degradation in n-MOSFETs}} , author={{ IStarkov }} , journal={{Journal Vacuum Science Technology B}} , year={2013} } @incollection{b3, , title={{Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics}} , author={{ AKerber } and { ECartier } and { LPantisano } and { RDegraeve }} , journal={{IEEE Electron Dev Lett}} , year={2003} } @book{b4, , title={{Mechanism of O 2 -anneal induced Vfb shifts of Ru gated stacks}} , author={{ ZLi } and { TSchram }} , year={2007} } @book{b5, , title={{Modeling of stress-induced leakage current and impact ionization in MOS devices}} , author={{ DanieleIelmini A } and { AlessandroSottocornola } and { S }} , year={2002} } @incollection{b6, , title={{On the Origin of Thermal Runaway in a Trench Power MOSFET}} , author={{ DonaldDibra } and { MatthiasStecher } and { StefanDecker }} , journal={{IEEE Trans Electron Dev}} 58 , year={2011} } @incollection{b7, , title={{Experimental evidence of inelastic tunnelling in stress-induced leakage current}} , author={{ STakagi } and { NYasuda } and { AToriumi }} , journal={{IEEE Trans Electron Dev}} 46 , year={1999} } @incollection{b8, , title={{Member Influence of Molding Compound on Leakage Current in MOS Transistors}} , author={{ Mohammed Aftab Alam }} , journal={{IEEE Trans on components}} , year={2011} } @incollection{b9, , title={{A simple method to qualify the LDD structure against the early mode of hotcarrier degradation}} , author={{ ARaychaudhuri }} , journal={{IEEE Trans. Electron Devices}} , year={1996} } @incollection{b10, , title={{Hot carrier reliability of RF N-LDMOS for S band radar application}} , author={{ MGares } and { MMasmoudi } and { PBertram } and { JMarcon } and { MBelaid }} , journal={{M. Reliability}} 46 , year={2006} } @book{b11, , title={{Relate LDMOS device parameters to RF performance. STMicroelectronics, Application note: AN 1228}} , author={{ PJohn } and { BHanson }} , year={2000} } @incollection{b12, , title={{Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors, Electron Devices}} , author={{ SReggiani } and { GBarone } and { Tcad }} , journal={{IEEE Transactions}} , year={2013} } @incollection{b13, , title={{TCAD Smulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors}} , author={{ SReggiani } and { Barone }} , journal={{IEEE Transactions Electron Devices}} , year={2013} } @incollection{b14, , title={{Simulation of nonequilibrium thermal effects in power LDMOS transistors}} , author={{ DGRaman } and { TSWalker } and { Fisher }} , journal={{Solid-State Electronics}} , year={2003} } @incollection{b15, , title={{Atlas User's Manual-Device Simulation Software}} , booktitle={{Silvaco International}} Santa Clara, California , year={1998} } @incollection{b16, , title={{Hot-Carrier-Induced Linear Drain Current Degradation of LDMOS Under Pulse Gate Stress With Amplitudes}} , author={{ SLiu }} , journal={{E. Devi. Letter}} , year={2013} } @incollection{b17, , title={{RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity}} , author={{ XShuming } and { FPangdow } and { WJianqing } and { Changhong }} , journal={{IE DM}} , year={1999} } @incollection{b18, , title={{Evaluation of hotelectron effect on LDMOS device and circuit performances}} , author={{ Jiann-ShiunYuan } and { LJiang }} , journal={{IEEE Trans Electron Dev}} , year={2008} } @book{b19, , title={{Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage. Micro. Reliability}} , author={{ DCorso }} , year={2007} }