@incollection{,
	
					
					
					5ACC84E2411388E8F0F7C7587259EC2C
				,
	author={{AvijitDas} and {Md NazmulIslam} and {}},
	journal={{Global Journal of Researches in Engineering}},
	journal={{GJRE}}2249-45960975-586110.34257/gjre,
	address={Cambridge, United States},
	publisher={Global Journals Organisation}15916
}

@incollection{b0,
	
	
		,
	title={{Enhancement and Depletion Mode Vertical Channel MOSGated Thyristors}}
		,
	author={{
			BJBaliga
		}}
	
	
		,
	journal={{Electronics Letters}}
		
			15
			
			,
	year={1979}
		
	

}

@incollection{b1,
	
	
		,
	title={{Soft Punch Through (SPT) -Setting new Standards in 1200V IGBT}}
		,
	author={{
			SDewar
		} and {
			SLinder
		} and {
			CArx
		} and {
			AMukhitinov
		}}
		
		
		
	
	
		,
	booktitle={{Proc. PCIM}}
				PCIMNuremberg
		
			,
	year={2000}
			
		
	

}

@incollection{b2,
	
	
		,
	title={{The field stop IGBT (FS IGBT). A new power device concept with a great improvement potential}}
		,
	author={{
			TLaska
		} and {
			MMunzer
		} and {
			FPfirsch
		} and {
			CSchaeffer
		} and {
			TSchmidt
		}}
		
		
		
		
	
	
		,
	booktitle={{Proc. ISPSD}}
				ISPSDFrance
		
			,
	year={2000}
			
		
	

}

@incollection{b3,
	
	
		,
	title={{Laser annealing of double implanted layers for IGBT Power Devices}}
		,
	author={{
			CSabatier
		} and {
			SRack
		} and {
			HBeseaucele
		} and {
			JVenturini
		} and {
			TYHoffmann
		} and {
			ERosseel
		} and {
			JSteenbergen
		}}
		
		
		
		
		
		
	
	
		,
	booktitle={{16th IEEE conf. on Advanced Thermal Processing of Semiconductors}}
				Las Vegas, USA
		
			,
	year={2008}
			
		
	

}

@incollection{b4,
	
	
		,
	title={{Deep melt activation using laser thermal annealing for IGBT thin wafer technology}}
		,
	author={{
			TGutt
		} and {
			HSchulze
		}}
		
	
	
		,
	booktitle={{Proc. ISPSD 2010}}
				ISPSD 2010Japan
		
			
		
	

}

@incollection{b5,
	
	
		,
	title={{Optimization of o-emitter/ n-buffer using laser annealing technique in IGBT design}}
		,
	author={{
			CZhu
		} and {
			IDeviny
		} and {
			BYu
		} and {
			LCoulbeck
		} and {
			GLiu
		}}
		
		
		
		
	
	
		,
	booktitle={{Proc. IECON 2013}}
				IECON 2013Vienna, Austria
		
			
		
	

}

@book{b6,
	
	
		,
	title={{Study of Failure Mechanism in the Modern IGBT with a Highly Doped N-Buffer Layer}}
		,
	author={{
			CZhu
		} and {
			IDeviny
		} and {
			GLiu
		} and {
			ADai
		}}
		
		
		
		
			,
	year={Oct. 29-Nov. 1,2014}
			
			,
	address={Dallas, TX}
		
	
	,
	note={40th Annual Conference of the IEEE (IECON}

}

@incollection{b7,
	
	
		,
	title={{Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration}}
		,
	author={{
			VKKhanna
		} and {
			AKumar
		} and {
			SCSood
		} and {
			RPGupta
		} and {
			KLJasuja
		} and {
			BMaj
		} and {
			AKostka
		}}
		
		
		
		
		
		
	
	
		,
	journal={{Solid-State Electronics}}
		
			45
			
			,
	year={2001}
		
	

}

@incollection{b8,
	
	
		,
	title={{Reverse Blocking IGBT for matrix converter with ultra-thin wafer technology}}
		,
	author={{
			MTakai
		} and {
			TNaito
		} and {
			KUeno
		}}
		
		
	
	
		,
	booktitle={{IEEE Proceedings-Circuits, Devices and Systems}}
				
			,
	year={June 2004}
			151
			
		
	

}

@incollection{b9,
	
	
		,
	title={{A Novel Approach to Practical Matrix Converter Motor Drive System with Reverse Blocking IGBT}}
		,
	author={{
			JItoh
		} and {
			ISato
		} and {
			AOdaka
		} and {
			HOhguchi
		} and {
			HKadachi
		} and {
			NEguchi
		}}
		
		
		
		
		
	
	
		,
	journal={{IEEE Transactions on Power Electronics}}
		
			20
			6
			,
	year={November 2005}
		
	

}

@incollection{b10,
	
	
		,
	title={{Based Stored Charge Modeling of Insulated Gate Bipolar Transistor}}
		,
	author={{
			ADas
		} and {
			.MMd
		} and {
			Haq
		} and {
			.NMd
		} and {
			MdZ RIslam
		} and {
			Khan
		}}
		
		
		
		
		
	
	
		,
	journal={{International Journal of Engineering Innovation & Research}}
		
			4
			2
			
			,
	year={March 2015}
		
	

}

@incollection{b11,
	
	
		,
	title={{An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor}}
		,
	author={{
			RHefner
		} and {
			DLBlackburn
		}}
		
	
	
		,
	booktitle={{Solid State Electronics}}
				
			,
	year={1988}
			31
			
		
	

}