Abstract

Single crystal Diamond based Charge Particle detectors have been realized through a pilot stage fabrication run at the Indian Institute of Technology-Bombay (IIT-B). Device simulations in Technology Computer Aided Design (TCAD) were employed to study the physics of charge transport within the detector. Static case simulations revealed values of critical dc performance parameters like total leakage current at applied bias as well as the intrinsic bulk resistance offered by the detector. Dynamic case simulations meant to study the effect of alpha radiation were also conducted. They indicated a certain probability of charge multiplication at low fields within the diamond crystal which needs further experimental investigation to validate. Device simulations also proved helpful in verification and validation of experimental results. Technology for fabrication of diamond detectors was developed through an iterative process spread across several runs to realize a robust device. DC characterization of the fabricated diamond detectors was performed to extract the terminal current at operating voltage (100V), intrinsic bulk resistance of the detector as well as the trend of the I-V curve.