Abstract

Increasing the efficiency of solar cell is the prime concern in the field of photovoltaic technology as solar cell has become the promising source of renewable energy in recent years. This paper presents InxGa1-xN based multi quantum well solar cell for higher efficiency. In this paper the performance of the solar cell i.e., open circuit voltage, short circuit current and efficiency are justified with the variation of band gap difference and donor and acceptor doping concentration. The maximum efficiency is found when the baseline cell is designed at 1.424eV and the maximum efficiency is 30.17% and 31.94% for a band gap difference of 0.3eV and donor doping concentration of 5*1018 cm-3 respectively.