AC Characteristics of a Dual Gate Large Area Graphene MOSFET
Keywords:
graphene MOSFET, GFET, large area graphene, top and back gate gain, transconductance
Abstract
This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.
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Published
2014-03-15
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Copyright (c) 2014 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.