@incollection{,
	
					
					
					D9B35A2D82ADBCB9AE147354FEA0CF5B
				,
	author={{Towhid AdnanChowdhury}},
	journal={{Global Journal of Researches in Engineering}},
	journal={{GJRE}}2249-45960975-586110.34257/gjre,
	address={Cambridge, United States},
	publisher={Global Journals Organisation}23216
}

@incollection{b0,
	
	
		,
	title={{Electrical characteristics comparison between fully-depleted SOI MOSFET and partially-depleted SOI MOSFET using Silvaco software}}
		,
	author={{
			FZRahou
		} and {
			AGuen-Bouazza
		} and {
			MRahou
		}}
		
		
	
	
		,
	journal={{Global Journal of Researches in Engineering Electrical and Electronics Engineering}}
		
			13
			1
			,
	year={2013}
		
	

}

@incollection{b1,
	
	
		,
	title={{Electrical characteristics comparison between partially-depleted SOI and n-MOS devices investigation using Silvaco}}
		,
	author={{
			YHusaini
		} and {
			MHIsmail
		} and {
			ASZoolfakar
		} and {
			NKhairudin
		}}
		
		
		
	
	
		,
	booktitle={{IEEE 2010 IEEE Symposium on Industrial Electronics and Applications}}
		
			,
	year={October 3-5, 2010}
			
		
	

}

@book{b2,
	
	
		,
	title={{Low-Voltage SOI CMOS VLSI Devices and Circuits}}
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	author={{
			JBKuo
		} and {
			SCLin
		}}
		
		
			,
	year={2001}
			,
	publisher={Wiley}
			
			,
	address={New York}
		
	
	,
	note={1st edition}

}

@incollection{b3,
	
	
		,
	title={{Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs}}
		,
	author={{
			YTaur
		}}
	
	
		,
	journal={{IEEE Transactions on Electron Devices}}
		
			48
			12
			
			,
	year={Dec. 2001}
		
	

}

@incollection{b4,
	
	
		,
	title={{A Study of Conventional and Junctionless MOSFET Using TCAD Simulations}}
		,
	author={{
			NGupta
		} and {
			JPatel
		} and {
			AKRaghav
		}}
		
		
	
	
		,
	booktitle={{IEEE International Conference on Advanced Computing & Communication Technologies}}
		Haryana, India
		
			,
	year={2015}
			
		
	

}

@incollection{b5,
	
	
		,
	title={{Numerical modeling of subthreshold region of Junctionless Double Surrounding Gate MOSFET (JDSG)}}
		,
	author={{
			SRewari
		} and {
			SHaldar
		} and {
			VNath
		} and {
			SSDeswal
		} and {
			RSGupta
		}}
		
		
		
		
	
	
		,
	journal={{Superlattices and Microstructures}}
		
			90
			
			,
	year={Feb 2016}
		
	

}

@incollection{b6,
	
	
		,
	title={{Performance and a new 2-D analytical modeling of a Dual-Halo Dual-Dielectric Triple-Material Surrounding-Gate-All-Around (DH-DD-TM-SGAA) MOSFET}}
		,
	author={{
			NGupta
		} and {
			JK BPatel
		} and {
			AKRaghav
		}}
		
		
	
	
		,
	journal={{Journal of Engineering Science and Technology}}
		
			13
			11
			
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	year={Nov. 2018}
		
	

}

@book{b7,
	
	
		,
	title={{An accurate 2D Analytical Model for Transconductance-to-Drain Current ratio (gm/Id) for a Dual-Halo Dual-Dielectric Triple-Material Cylindrical-Gate-All-Around}}
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	author={{
			NGupta
		} and {
			JK BPatel
		} and {
			AKRaghav
		}}
		
		
		
		
			DH-DD-TM-CGAA
		
	

}

@incollection{b8,
	
	
		,
	title={{}}
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	author={{
			Mosfets
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		,
	journal={{International Journal of Engineering}}
		
			31
			7
			
			,
	year={July 2018}
		
	

}

@incollection{b9,
	
	
		,
	title={{Investigation of FDSOI and PDSOI MOSFET characteristics}}
		,
	author={{
			HWWei
		} and {
			SHRuslan
		}}
		
	
	
		,
	booktitle={{AIP Conference Proceedings, 2173, 020005}}
		
			,
	year={2019}
		
	

}

@incollection{b10,
	
	
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	title={{}}
	
	
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	journal={{ATLAS User's Manual Device Simulation Software, Silvaco International}}
		
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	year={2004}
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	address={Santa Clara, Calif., USA}
		
	

}

@incollection{b11,
	
	
		,
	title={{PD-SOI and FD-SOI: A comparison of circuit performance}}
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	author={{
			AMarshall
		} and {
			SNatarajan
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	booktitle={{Proc. IEEE 9th International Conference on Electronics, Circuits and Systems}}
		IEEE 9th International Conference on Electronics, Circuits and Systems
		
			,
	year={2002}
			1
			
		
	

}

@incollection{b12,
	
	
		,
	title={{Effect of threshold voltage on various CMOS performance parameter}}
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	author={{
			AVerma
		} and {
			AMishra
		} and {
			ASingh
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			A
		}}
		
		
		
	
	
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	journal={{International Journal of Engineering Research and Applications}}
		
			4
			4
			
			,
	year={2014}
		
	

}

@incollection{b13,
	
	
		,
	title={{Study of floating body effect in SOI technology}}
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	author={{
			BVandana
		}}
	
	
		,
	journal={{International Journal of Modern Engineering Research}}
		
			3
			3
			
			,
	year={2013}
		
	

}

@book{b14,
	
	
		,
	title={{Electrical Characterization of Silicon-on-insulator Materials and Devices}}
		,
	author={{
			SCristoloveanu
		} and {
			SLi
		}}
		
		
			,
	year={2014}
			,
	publisher={Springer US}
		
	

}

@incollection{b15,
	
	
		,
	title={{Reduction of subthreshold leakage current in MOS transistors}}
		,
	author={{
			SKSingh
		} and {
			BKKaushik
		} and {
			DSChauhan
		} and {
			SKumar
		}}
		
		
		
	
	
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	journal={{World Applied Sciences Journal}}
		
			25
			3
			
			,
	year={2013}
		
	

}