An Adder with Novel PMOS and NMOS for Ultra Low Power Applications in Deep Submicron Technology

Table of contents

1. Introduction

he adder is one of the most critical components of a central processing unit. The object of the adders not only adding of bits but also involves in address calculation, subtraction, division and multiplication, the adders are critical components to determine the speed, delay and power of the overall system, low power adders are always preferable. Due to the popularity of portable electronic products low power system has attracted more attention in recent years, an system on chip (SOC) design can contain more and more components that lead to a higher power density. This makes power dissipation reach the limits of what packaging, cooling or other infrastructure can support, reducing the power consumption not only can enhance battery life but also can avoid the overheating problem which would increase the difficulty of packaging or cooling. Therefore the consideration of power consumption in complex SOCs has become a big challenge to designers, moreover in modern VLSI designs [3][4][5].

Lowering power is one of the greatest challenges facing the IC industry Today, temperature profile and battery life requirements for tethered and un tethered systems have made power consumption a primary optimization target for IC industry [2]. IC power consumption consists of three basics components: switching power, short circuit power and leakage power [6][7].

Dynamic power

2 DD L D V f C 2 1 P = (1)

Dynamic power is square of supply voltage, therefore by reducing supply voltage we can reduce dynamic power [8].

The leakage power is mainly due to sub threshold current and it may be defined as the drain to source current of the transistor operating in the weak inversion region of MOSFET this subthreshold leakage may be defined as in eq (2) give s a simple method for estimating the leakage current in a single NMOS transistor [9][10][11].

( )

? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t ds t t gs v V V v V I exp 1 exp I 0 s ? (2)

V t is the thermal voltage and is given by Q/KT and n is the sub threshold slope coefficient. Generally there are varies leakage reduction techniques based on mode of operation of systems the two operation modes are active mode and stand by mode or idle mode. Most of the leakage power reduction techniques will be based on idle mode [12]. SECTION2: gives an overview of the Novel PMOS and NMOS and their simulation results, SECTION3 presents Novel 3 bit full adder and conventional full adder, SECTION 4 describes experimental results of conventional, Novel full adders and DTMOS full adders, SECTION5gives conclusions.

II.

2. An Over View of Novel PMOS and NMOS

Ultra low power operation plays a major role in designing of CMOS circuits in subthreshold regime, for any digital or analog design the basic components are PMOS and NMOS devices, the power consumption of this basic elements determine the overall power of the system. In this section we provide Novel PMOS and NMOS, simulations have been carried out in cadence design frame work to verify the functionality of the

3. A Conventional CMOS Adder

The 28 transistor full adder is the pioneer traditional adder circuit, the schematic of this adder is shown. This adder cell is built using equal number of NFET and PFET transistors, the MOS logic can be realized using equations [1].

Carry: AB+BC+AC (2) SUM: ABC+(A+B+C)C(3)

The conventional full adder consumes more power compared to Novel full adder, both conventional and Novel full adders are simulated and their average power is calculated [14].

4. Simulation Results and Analysis

An investigation has been carried out for calculating average power, static power of conventional full adder and the Novel full adder and compared their powers at 45nm technology using virtuoso design environment.

A novel CMOS adder may have an overhead area, but it consumes less power [15].

5. Conclusions

The performance of many large circuits are strongly dependent on the performance of the full adder circuits that have been used. An attempt has been made to design 84T novel full adder with low power consumption. In this paper we have simulated conventional full adder and Novel full adder and calculated average power. As mentioned earlier as the technology advances apart of dynamic power, there will be a equal part of leakage power, therefore a Novel full adder will suitable for low power design.

Figure 1.
Figure 1 : Novel PMOS
Figure 2. Figure 3 :
3Figure 3 : Conventional full adder
Figure 3. Figure 4 :
4Figure 4 : Full adder with novel PMOS and NMOS
Figure 4. Table 1 :
1
Voltage Is 0.6v
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder DTCMOS full adder
Avg. Power 97.23nw 105.8nw 243nw
Delay 150ps 580ps 291ps
PDP 1.456×10-17 61×10-15 7.07×10-17
Figure 5. Table 2 :
2
Conventional CMOS Full Adder Versus Novel Full Adder
at 45nm and Supply Voltage Is 1.1v
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder
Avg. power 0.43µw 1.88µw
Delay 72ps 43ps
PDP 3.152×10 -17 8.084×10 -17
Figure 6. Table 3 :
3
Adder and Conventional Full Adder with Supply Voltage
of 1.1v @180nm
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder
Avg. power 69.49µw 32.8µw
Delay 217ps 166ps
PDP 15×10 15 5.45×10 15
Figure 7. Table 4 :
4
Adder, DTCMOS Full Adder and Conventional Full
Adder at 45nm with 0.6v
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder DTCMOS full adder
Static power
when all inputs are at 9.159pw 8.688pw 109.4nw
0.6v
Static power
when all inputs are at 14pw 8.756pw 78nw
0v
Figure 8. Table 5 :
5
Adder and Conventional Full Adder at 45nm With1.1v
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder
Static power when
all inputs are at 44.6pw 30.97pw
0.6v
Static power when all inputs are at 0v 52.18pw 28.76pw
Figure 9. Table 6 :
6
Adder, And Conventional Full Adder At 180nm With1.8v
Parameter Full Adder With Novel PMOS & NMOS Conventional CMOS full adder
Static power when
all inputs are at 30.97pw 69.25pw
1.8v
Static power when all inputs are at 0v 590pw 97.5pw
V.
1
2

Appendix A

  1. Designing Carry Look-Ahead Adders with an Adiabatic Logic Standard-Cell Library. A Blotti , R Castellucci , Saletti . PATMOS 2002. p. .
  2. A Comparison of Some Circuit Schemes for Semi-Reversible Adiabatic Logic. A Blotti , . S Di Pascoli , R Saletti . International Journal of Electronics 2002. 89 (2) p. .
  3. Designing Low-Power Energy Recovery Adders Based On Pass Transistor Logic, D Soudris , V Pavlidis , A Thanailakis . 2001. IEEE.
  4. Ultra Low-Power Full-Adder for Biomedical Applications, E S Chew , M W Phyu , W L Goh . 2009. (IEEE pp115-118)
  5. Implementation of Low Power Digital Multipliers Using 10 Transistor Adder Blocks. K Dhireesha , John . Journal of Low power Electronics 2005. (3) p. .
  6. Performance Evaluation of Adiabatic Gates. M Alioto , G Palumbo . IEEE Trans on Circuits and Systems-I 2000. 47 (9) p. .
  7. An Improved SOI CMOS Technology Based Circuit Technique for Effective Reduction of Standby Subthreshold Leakage. Md Manish Kumar1 , Anwar Hussain1 , K Sajal , Paul2 . Circuits and Systems, Scientific Research October 2013, 4. p. .
  8. A New Design of the CMOS Full Adder. N Zhuang , H Wu . IEEE Journal of Solid-state Circuits 1992. 27 (5) p. .
  9. A High-Speed Hybrid Full Adder. R K Navi , Md Reza Saatchi , O Daei . European Journal of Scientific Research 2009. 26 (1) p. .
  10. Single Chip Wireless Systems Using SOI. R Reedy . Proceedings of the International SOI Conference, (the International SOI ConferenceSan Diego
    ) 4-7 October 1999. p. .
  11. A Novel Low Power Energy Recovery Full Adder Cell, R Shalem , E John , L K John . (publisher unknown)
  12. Recent Advances in SOI Materials and Device Technologies for High Temperature. S Cristoloveanu , G Reichert . Proceedings of High-Temperature Electronic Materials, Devices and Sensors, (High-Temperature Electronic Materials, Devices and SensorsSan Diego
    ) 22-27 February 1998. p. .
  13. Design of robust, energy efficient full adders for deep-submicrometer design using hybrid CMOS logic style. S Goel , A Kumar , M A Bayoumi . IEEE Transactions on VLSI Systems 2006. 4 (12) p. .
  14. Performance/ Complexity Space Exploration: Bulk vs. SOI. S J Abou-Samra , A Guyot . Proceedings of the International Workshop on Power and Timing Modelling, Optimization and Simulation, Lyngby, (the International Workshop on Power and Timing Modelling, Optimization and Simulation, Lyngby) October 1998. p. .
  15. The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications. Y Kado . IEICE Transactions on Electronics 1997. (3) p. .
Notes
1
© 2013 Global Journals Inc. (US) ( )
2
© 2013 Global Journals Inc. (US) ( ) F
Date: 2013-01-15